Tris-HEPES-SDS Running Buffer,10X
Tris-HEPES-SDS Running Buffer,10X应存放于冷暗处，能放于普通冰箱内。放置时间不宜超过一周，倾注的平板培养基不宜超过3天。每批培养基均必须附有该批培养基制各记录副页或明显标签
Tris-HCl Buffer,1.0M,pH7.0
Tris-HCl Buffer,1.0M,pH7.0应存放于冷暗处，能放于普通冰箱内。放置时间不宜超过一周，倾注的平板培养基不宜超过3天。每批培养基均必须附有该批培养基制各记录副页或明显标签
TAPS Buffer,0.2M,pH8.5
TAPS Buffer,0.2M,pH8.5应存放于冷暗处，能放于普通冰箱内。放置时间不宜超过一周，倾注的平板培养基不宜超过3天。每批培养基均必须附有该批培养基制各记录副页或明显标签
Tris-Glycine-Native Running Buffer,10X
Tris-Glycine-Native Running Buffer,10X应存放于冷暗处，能放于普通冰箱内。放置时间不宜超过一周，倾注的平板培养基不宜超过3天。每批培养基均必须附有该批培养基制各记录副页或明显标签
Veronal Buffered Saline with Mg++ and EGTA (VBSMG)
Veronal Buffered Saline with Mg++ and EGTA (VBSMG)应存放于冷暗处，能放于普通冰箱内。放置时间不宜超过一周，倾注的平板培养基不宜超过3天。每批培养基均必须附有该批培养基制各记录副页或明显标签
Tricine Buffer,0.5M pH7.4
Tricine Buffer,0.5M pH7.4应存放于冷暗处，能放于普通冰箱内。放置时间不宜超过一周，倾注的平板培养基不宜超过3天。每批培养基均必须附有该批培养基制各记录副页或明显标签
Sodium Chloride Solution（氯化钠溶液），0.9%
Sodium Chloride Solution（氯化钠溶液），0.9%应存放于冷暗处，能放于普通冰箱内。放置时间不宜超过一周，倾注的平板培养基不宜超过3天。每批培养基均必须附有该批培养基制各记录副页或明显标签
Staining Buffer
Staining Buffer应存放于冷暗处，能放于普通冰箱内。放置时间不宜超过一周，倾注的平板培养基不宜超过3天。每批培养基均必须附有该批培养基制各记录副页或明显标签
TES Buffer,0.2M,pH7.0
TES Buffer,0.2M,pH7.0应存放于冷暗处，能放于普通冰箱内。放置时间不宜超过一周，倾注的平板培养基不宜超过3天。每批培养基均必须附有该批培养基制各记录副页或明显标签
Sodium Acetate Solution（乙酸钠溶液）,3M,pH4.5
Sodium Acetate Solution（乙酸钠溶液）,3M,pH4.5应存放于冷暗处，能放于普通冰箱内。放置时间不宜超过一周，倾注的平板培养基不宜超过3天。每批培养基均必须附有该批培养基制各记录副页或明显标签